80NSSC26P0124

DEEP REACTIVE ION ETCHING OF SINGLE CRYSTAL 4H-SIC

National Aeronautics and Space Administration · United States

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Awarded

AwardedOtherFederal

Basic information

Reference number: 80NSSC26P0124
Issuing organization: National Aeronautics and Space Administration · Find award history →
Government level: Federal
Solicitation type: Other
Title: DEEP REACTIVE ION ETCHING OF SINGLE CRYSTAL 4H-SIC
Source: USASpending (Federal)
Source ID: usa-80NSSC26P0124

Details

Location: United States

Description

DEEP REACTIVE ION ETCHING OF SINGLE CRYSTAL 4H-SIC Awarded to: BIOTRONICS, INC Agency: National Aeronautics and Space Administration Award type: PURCHASE ORDER

Dates

Publication: 2026/01/08 12:00:00 AM UTC
Closing date: 2026/02/05 12:00:00 AM UTC

Estimated value

$70K USD

Classification

Normalized category

Other

Source: USASpending (Federal)

Last updated 2026-05-25, 2:34:04 p.m.

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