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80NSSC26P1008
DRY ETCHING OF COMBINED GALLIUM NITRIDE EPITAXIAL LAYER AND SILICON CARBIDE SUBSTRATE
National Aeronautics and Space Administration · OH, United States
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Time Left to Bid
Awarded
AwardedOtherFederal
Basic information
- Reference number
- 80NSSC26P1008
- Issuing organization
- National Aeronautics and Space Administration · Find award history →
- Government level
- Federal
- Solicitation type
- Other
- Title
- DRY ETCHING OF COMBINED GALLIUM NITRIDE EPITAXIAL LAYER AND SILICON CARBIDE SUBSTRATE
- Source
- usaspending
- Source ID
- CONT_AWD_80NSSC26P1008_8000_-NONE-_-NONE-
Details
- Location
- OH, United States
Description
DRY ETCHING OF COMBINED GALLIUM NITRIDE EPITAXIAL LAYER AND SILICON CARBIDE SUBSTRATE Awarded to: BIOTRONICS, INC Sub-agency: National Aeronautics and Space Administration Contract type: PURCHASE ORDER
Dates
- Publication
- 2026/07/15 12:00:00 AM UTC
- Closing date
- 2026/08/19 12:00:00 AM UTC
Estimated value
$85K USD
Classification
Normalized category
Other