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80GRC025P0002
REQUIREMENT TO PROCURE A LARGE QUANTITY OF CUSTOM GALLIUM NITRIDE (GAN) SCHOTTKY DIODES WITH CUTTING EDGE CAPABILITIES ONLY POSSIBLE TO BE MADE AT THE MOST ADVANCED GAN FOUNDRIES.
National Aeronautics and Space Administration · MA, United States
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Time Left to Bid
Awarded
AwardedOtherFederal
Basic information
- Reference number
- 80GRC025P0002
- Issuing organization
- National Aeronautics and Space Administration · Find award history →
- Government level
- Federal
- Solicitation type
- Other
- Title
- REQUIREMENT TO PROCURE A LARGE QUANTITY OF CUSTOM GALLIUM NITRIDE (GAN) SCHOTTKY DIODES WITH CUTTING EDGE CAPABILITIES ONLY POSSIBLE TO BE MADE AT THE MOST ADVANCED GAN FOUNDRIES.
- Source
- usaspending
- Source ID
- CONT_AWD_80GRC025P0002_8000_-NONE-_-NONE-
Details
- Location
- MA, United States
Description
REQUIREMENT TO PROCURE A LARGE QUANTITY OF CUSTOM GALLIUM NITRIDE (GAN) SCHOTTKY DIODES WITH CUTTING EDGE CAPABILITIES ONLY POSSIBLE TO BE MADE AT THE MOST ADVANCED GAN FOUNDRIES. Awarded to: RAYTHEON COMPANY Sub-agency: National Aeronautics and Space Administration Contract type: PURCHASE ORDER
Dates
- Publication
- 2025/10/01 12:00:00 AM UTC
- Closing date
- 2026/09/30 12:00:00 AM UTC
Estimated value
$274K USD
Classification
Normalized category
Other