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FA865022C2321
Low Temperature Homogeneous Epitaxy of 4H-SiC
Department of the Air Force · United States
This tender closed on Tuesday, March 31, 2026. Browse open opportunities
Time Left to Bid
Closed
ClosedDefence & SecurityFederal
Basic information
- Reference number
- FA865022C2321
- Issuing organization
- Department of the Air Force · Find award history →
- Government level
- Federal
- Solicitation type
- Defence & Security
- Title
- Low Temperature Homogeneous Epitaxy of 4H-SiC
- Source
- USASpending (Federal)
- Source ID
- usa-FA865022C2321
Details
- Location
- United States
Summary
Technical research contract for developing low-temperature epitaxial growth of silicon carbide (4H-SiC), likely for specialized electronic or sensor applications in defence technology.
Description
LOW TEMPERATURE HOMOGENEOUS EPITAXY OF 4H-SIC USING NOVEL P Awarded to: STRUCTURED MATERIALS INDUSTRIES, INC. Agency: Department of Defense Sub-agency: Department of the Air Force Award type: DEFINITIVE CONTRACT
Dates
- Publication
- 2022/07/25 12:00:00 AM UTC
- Closing date
- 2026/03/31 12:00:00 AM UTC
Estimated value
$850K USD
Classification
Normalized category
Defence & Security